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| AOD609 Complementary Enhancement Mode Field Effect Transistor General Description The AOD609/L uses advanced trench technology MOSFETs to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. AOD609 and AOD609L are electrically identical. -RoHS Compliant -AOD609L is Halogen Free Features n-channel VDS (V) = 40V, I D = 12A (V GS=10V) RDS(ON)< 30m (VGS=10V) RDS(ON)< 40m (VGS=4.5V) p-channel VDS (V) = -40V, I D = -12A (V GS=-10V) RDS(ON)< 45m (VGS= -10V) RDS(ON)< 66m (VGS= -4.5V) D2 D1 TO-252-4L D-PAK D1/D2 Top View Drain Connected to Tab G2 S2 G1 S1 S2 G2 S1 G1 n-channel p-channel Max p-channel -40 20 -12 -12 -30 -20 20 30 15 2 1.3 -55 to 175 mJ W W C A Units V V Absolute Maximum Ratings T A=25C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 40 VGS Gate-Source Voltage 20 Continuous Drain Current B,H Pulsed Drain Current Avalanche Current C C B TC=25C TC=100C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25C TC=100C TA=25C TA=70C 12 12 30 14 9.8 27 14 2 1.3 -55 to 175 Repetitive avalanche energy L=0.1mH Power Dissipation Power Dissipation Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t 10s Maximum Junction-to-Ambient A,D Steady-State Maximum Junction-to-Ambient A,D Steady-State Maximum Junction-to-Lead C A,D t 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A,D Steady-State Maximum Junction-to-Lead C Symbol RJA RJC RJA RJC Device n-ch n-ch n-ch p-ch p-ch p-ch Typ 17.4 50 4 16.7 50 3.5 Max 25 60 5.5 25 60 5 Units C/W C/W C/W C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD609 N Channel Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=40V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, I D=12A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, I D=8A Forward Transconductance VDS=5V, ID=12A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C 1.7 30 24 37 31 25 0.76 1 2 516 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 82 43 4.6 8.3 2.3 1.6 6.4 VGS=10V, VDS=20V, RL=1.4, RGEN=3 IF=12A, dI/dt=100A/s IF=12A, dI/dt=100A/s 3.6 16.2 6.6 18 10 24 6.9 10.8 650 30 46 40 S V A pF pF pF nC nC nC ns ns ns ns ns nC m 2.5 Min 40 1 5 100 3 Typ Max Units V A nA V A STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge VGS=10V, VDS=20V, ID=12A A: The value of RJA is measured with the device in a still air environment with T A =25C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150C, using the steady state junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The RJA is the sum of the thermal impedence from junction to case R and case to ambient. JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. The SOA curve provides a single pulse rating. 2 G. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. A H. The maximum current rating is limited by bond-wires. Rev0: Nov 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD609 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 30 10V 25 20 ID (A) 4V 15 10 VGS=3.5V 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 36 Normalized On-Resistance 34 32 RDS(ON) (m) 30 28 26 24 22 20 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 90 ID=12A 10 70 RDS(ON) (m) IS (A) 1 125C 50 25C 30 0.1 125C 25C 100 VGS=10V VGS=4.5V 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V ID=8A VGS=10V ID=12A 5 0 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics ID(A) 15 10 125C 25C 5V 25 4.5V 20 30 VDS=5V 0.01 0.001 0.0001 10 3 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD609 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=20V ID= 12A Capacitance (pF) 800 600 Ciss 400 Crss 200 Coss 0 0 10 20 30 40 VDS (Volts) Figure 8: Capacitance Characteristics 100 10s 10 ID (Amps) Power (W) 100s 1 RDS(ON) limited TJ(Max)=150C TA=25C 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 1ms 10ms 0.1s 1s 10s 1000 TJ(Max)=150C TA=25C 100 0.1 10 DC 10 0.01 100 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton Single Pulse T 100 1000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD609 P-Channel Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID= -250A, VGS=0V VDS= -40V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID= -250A VGS= -10V, VDS= -5V VGS= -10V, I D= -12A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS= -4.5V, I D= -8A Forward Transconductance VDS= -5V, I D= -12A Diode Forward Voltage IS= -1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C -1.7 -30 36 52 51 22 -0.76 -1 -2 900 VGS=0V, VDS= -20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 97 68 14 16.2 VGS= -10V, VDS= -20V, ID= -12A 7.2 3.8 3.5 6.2 VGS= -10V, VDS= -20V, RL=1.4, RGEN=3 IF= -12A, dI/dt=100A/s 8.4 44.8 41.2 21 14 27 21 9.4 1125 45 65 66 S V A pF pF pF nC nC nC nC ns ns ns ns ns nC m -2 Min -40 -1 -5 100 -3 Typ Max Units V A nA V A STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg (-10V) Total Gate Charge Qg (-4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF= -12A, dI/dt=100A/s A: The value of RJA is measured with the device in a still air environment with T A =25C. The power dissipation PDSM and current rating IDSM are based on T J(MAX)=150C, using t 10s junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The RJA is the sum of the thermal impedence from junction to case R and case to ambient. JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. The SOA curve provides a single pulse rating. 2 G. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. A H. The maximum current rating is limited by bond-wires. Rev0: Nov 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD609 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 -10V 25 20 -ID (A) 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 12: On-Region Characteristics 65 Normalized On-Resistance 60 55 RDS(ON) (m) 50 45 40 35 30 0 10 15 20 -ID (A) Figure 14: On-Resistance vs. Drain Current and Gate Voltage 5 VGS=-10V VGS=-4.5V 1.7 1.5 VGS=-10V ID=-12A VGS=-3.5V -4.5V -5V -4V 20 -ID(A) 15 10 5 0 1.5 2 2.5 3 3.5 4 4.5 -VGS(Volts) Figure 13: Transfer Characteristics 125C 25C 25 30 VDS=-5V 1.3 1.1 VGS=-4.5V ID=-8A 0.9 0.7 -50 -25 0 25 50 75 100 125 150 Temperature (C) Figure 15: On-Resistance vs. Junction Temperature 100 130 ID=-12A 110 10 1 RDS(ON) (m) -IS (A) 90 125C 125C 0.1 25C 70 0.01 0.001 0.0001 50 25C 30 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 16: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 17: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD609 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 VDS=-20V ID= -12A Capacitance (pF) 1400 1200 1000 800 600 400 200 0 0 9 12 15 Qg (nC) Figure 18: Gate-Charge Characteristics 3 6 18 0 20 30 -VDS (Volts) Figure 19: Capacitance Characteristics 10 40 Crss Coss 8 -VGS (Volts) Ciss 6 4 2 0 100 10s 10 -ID (Amps) 100s 1 RDS(ON) limited TJ(Max)=150C TA=25C 0.1 1 -VDS (Volts) Figure 20: Maximum Forward Biased Safe Operating Area (Note E) 1ms 10ms 0.1s 1s 10s 1000 TJ(Max)=150C TA=25C Power (W) 100 10 0.1 DC 10 0.01 100 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 21: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 22: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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